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SHETIME TFN22-S1S1-2000-A

Brand Name: TFN22-S1S1-2000-A
Model Number: TFN22-S1S1-2000-A
Minimum Order Quantity: 1000
Packaging Details: SMD
Delivery Time: 3-5工作日
Stock: 100000
Description: Push-Push 1.85mm MicroSD Card SMD PC Card Sockets RoHS
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Specifications
Card Connection Mode:
Push-Push
Height Above Board:
1.85mm
Card Type:
MicroSD Card
Product Description

Product Overview

This product specification defines the product performance and the test methods to ascertain the performance of the T-FLASH CARD CONN., which is designed and manufactured by Compeny. This product specification defines the product performance and the test methods to ascertain the performance of the T-FLASH CARD CONN., which is designed and manufactured by Compeny. T-FLASH CARD.

Brand DONGGUAN GYUEDA ELECTRONICS CO.,LTD
Part Number TFN22-S1S1-2000-A
Description T F B
Material Compliance RoHS
Manufacturing Locations TAIWANFACTORY:
CHINAFACTORY:
Item Requirements Test Methods
1. Confirmation of Product Product shall be conforming to the requirements of applicable product drawing. Visually, dimensions and functionally inspected per applicable product drawing.
2. Contact resistance (Low Level) 80 m Max. initial 80 m . Subject mated contacts assembled in housing to closed circuit of 10 mA max. at open circuit voltage of 20 mV max. 10mA 20 mV max.
3. Insulation resistance 1000 M Min. 1000 M Measure by applying test potential between the adjacent contacts, and between the contacts and ground in the mated connector. MIL-STD-202, Method 302, Condition B (500 V DC10%). MIL-STD-202, 302 B (500V DC10%)
4. Dielectric Strength Connector must withstand test potential of 500 V AC for 1 minute. Current leakage must be 1.0 mA max.. 500V AC 1.0 mA. Measure by applying test potential between the adjacent contacts, and between the contacts and ground in the mated connector. MIL-STD-202, Method 301. MIL-STD-202 301
5. Durability (Repeated Mating/Unmating) Contact Resistance: 100 m Max. after testing 100 m Mate and unmate connector for 5000 cycle . 5000
6. Temperature rise 30C Max. 30C Carry rated current load.0.3A per contact. UL4980.3A UL498
7. Vibration Sinusoidal Low Frequency No electrical discontinuity greater then 1 sec (s) shall occur. Contact resistance:100 mmax. 1 sec (s) 100 m Subj
TABLE I: PERFORMANCE REQUIREMENTS
Items Requirements Test Methods
1.Confirmation of Product Product shall be conforming to the requirements of applicable product drawing. Visually, dimensions and functionally inspected per applicable product drawing.
2. Contact resistance (Low Level) 80 m Max. initial 80 m . Subject mated contacts assembled in housing to closed circuit of 10 mA max. at open circuit voltage of 20 mV max. 10mA 20 mV max.
3. Insulation resistance 1000 M Min. 1000 M Measure by applying test potential between the adjacent contacts, and between the contacts and ground in the mated connector. MIL-STD-202, Method 302, Condition B (500 V DC10%). MIL-STD-202, 302 B (500V DC10%)
4. Dielectric Strength Connector must withstand test potential of 500 V AC for 1 minute. Current leakage must be 1.0 mA max.. 500V AC 1.0 mA. Measure by applying test potential between the adjacent contacts, and between the contacts and ground in the mated connector. MIL-STD-202, Method 301. MIL-STD-202 301
5. Durability (Repeated Mating/Unmating) Contact Resistance: 100 m Max. after testing 100 m Mate and unmate connector for 5000 cycle . 5000
6. Temperature rise 30C Max. 30C Carry rated current load.0.3A per contact. UL4980.3A UL498
7.Vibration Sinusoidal Low Frequency No electrical discontinuity greater then 1 sec (s) shall occur. Contact resistance:100 mmax. 1 sec (s) 100 m Subj
TABLE II: PRODUCT QUALIFICATION TEST SEQUENCE
Items Requirements Test Methods
TABLE III: REFLOW SOLDERING PROFILE
Items Requirements Test Methods
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