Durable T Flash Card Socket Hanxia HX TF PUSH with High Dielectric Strength and Electrical Properties
Specifications
Operating Temperature:
-20℃~+70℃
Card Connection Mode:
自弹式
Rated Voltage (Max):
5V
Height Above Board:
2mm
Card Detection:
有
Connector Type:
卡座
Card Type:
MicroSD卡(TF卡)
Mfr. Part #:
HX TF PUSH
Package:
SMD
Model Number:
HX TF PUSH
Introduction
T-Flash Card Socket (HX TF PUSH)
This product specification defines the performance and testing methods for the T-FLASH card socket, designed and manufactured by Shenzhen Hanxia Electronic Co., Ltd. It is suitable for various electronic applications requiring a T-Flash card interface.
Product Attributes
- Brand: HX
- Origin: Shenzhen Hanxia Electronic Co., Ltd.
- Certifications: RoHS compliant, UL498
- Material: Follows RoHS directive requirements.
Technical Specifications
| Item | Requirements | Test Methods |
| 1. Confirmation of Product | ||
| 2. Contact resistance (Low Level) | 100 m Max. initial | Subject mated contacts assembled in housing to closed circuit of 10 mA max. at open circuit voltage of 20 mV max. |
| 3. Insulation resistance | 1000 M Min. | Measure by applying test potential between the adjacent contacts, and between the contacts and ground in the mated connector. MIL-STD-202, Method 302, Condition B (500 V DC10%). |
| 4. Dielectric Strength | 500 V AC for 1 minute. Current leakage must be 1.0 mA max. | Measure by applying test potential between the adjacent contacts, and between the contacts and ground in the mated connector. MIL-STD-202, Method 301. |
| 5. Durability (Repeated Mating/Unmating) | Contact Resistance: 100 m Max. after testing | Mate and unmate connector for 5000 cycles. |
| 6. Temperature rise | 30C Max. | Carry rated current load. 0.3A per contact. (UL498) |
| 7. Vibration Sinusoidal Low Frequency | No electrical discontinuity greater then 1 sec (s) shall occur. Contact resistance: 100 m max. | Subject mated connector to 10-55-10 Hz traversed in 1 minute at 1.5 mm amplitude 2 hours each of 3 mutually perpendicular plane, 10 mA applied. MIL-STD-202, Method 201. |
| 8. Shock | No electrical discontinuity greater than 1 sec. shall occur. No damage to product. | Applying an appropriate holder is allowed in vibration test and shock test. MIL-STD-202, Method 213, 490m/s2, 3 axes. |
| 9. Thermal shock | No damage, Contact Resistance (Low Level) (Final) 100 mmax. | Temperature range from -55C to +85C. Start from -55C. After 30 min. change to +85C, change time is no more than 30 seconds. Total 5 cycles. MIL-STD-202, Method 107D, condition A. |
| 10. Humidity | No damage, Contact Resistance (Low Level) (Final) 100 mmax. Dielectric Strength should be OK, Insulation Resistance should be 100 M min. | Temperature :402C 96 hours. Relative humidity: 90-95%; Duration: 96 Hours. MIL-STD-202, Method 103. |
| 11. Solderability | Appearance of the specimen shall be inspected after the test with the assistance of a magnifier capable of giving a magnification of 10 X for any damage such as pinholes, void or rough surface. | Soldering time: 3 to 5 Seconds Temperature: 2555C. |
| 12. Resistance to soldering heat | No damage | Leave subject product in the 2555C chamber for 2 minutes. |
| 13. Salt Spray | Contact Resistance (Low Level) (Final) 100 mmax. | 51% salt concentration 244 hours 35 2C MIL-STD-202, Method 101 Condition B. |
| 14. High temperature | Contact resistance: 100 m max. | Subject product to 852C for 96 hours continuously. MIL-STD-202, Method 108. |
Reflow Soldering Profile
| Parameter | Reference Specification |
| Average temperature gradient in preheating | 2.5C/s |
| Soak time tsoak | 2-3 minutes |
| Time above 217C t1 | 60 s |
| Time above 230C t2 | 50 s |
| Time above 255C t3 | 5 s |
| Peak temperature in reflow Tpeak | 255C (+5/-0C) |
| Temperature gradient in cooling | Max -5C/s |
2510131431_hanxia-HX-TF-PUSH_C5184837.pdf
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