Durable nano sim card holder hanxia HX NANO SIM 7P-Ow H1.45 connector with tested insulation resistance
Specifications
Operating Temperature:
-40℃~+70℃
Card Connection Mode:
翻盖式
Height Above Board:
1.45mm
Connector Type:
卡座
Card Type:
NanoSIM卡
Mfr. Part #:
HX NANO SIM 7P-Ow H1.45
Package:
SMD
Model Number:
HX NANO SIM 7P-Ow H1.45
Introduction
Product Overview
This product specification details the characteristics and test methods for the HX NANO SIM 7P-Ow H1.45 connector, designed and manufactured by Shenzhen Hanxia Electronic Co., Ltd. It is a NANO SIM card holder designed for various applications requiring reliable connectivity.
Product Attributes
- Brand: HX
- Origin: Shenzhen Hanxia Electronic Co., Ltd.
- Material: Compliant with RoHS requirements for harmful materials.
- Certifications: UL498 (Safety of attachment plug and receptacle)
Technical Specifications
| Item | Requirements | Test Methods |
| Product Confirmation | Product shall be conforming to the requirements of applicable product drawing. | Visually, dimensions and functionally inspected per applicable product drawing. |
| Contact resistance (Low Level) | 50 m Max. initial | Subject mated contacts assembled in housing to closed circuit of 10 mA max. at open circuit voltage of 20 mV max. |
| Insulation resistance | 1000 M Min. | Measure by applying test potential between the adjacent contacts, and between the contacts and ground in the mated connector. MIL-STD-202, Method 302, Condition B (100 V DC10%). |
| Dielectric Strength | Connector must withstand test potential of 500 V AC for 1 minute. Current leakage must be 1.0 mA max. | Measure by applying test potential between the adjacent contacts, and between the contacts and ground in the mated connector. MIL-STD-202, Method 301. |
| Durability (Repeated Mating/Unmating) | Contact Resistance: 150 m Max. after testing | Mate and unmate connector for 3000 cycle. |
| Temperature rise | 30C Max. | Carry rated current load. 0.3A per contact. (UL498) |
| Vibration Sinusoidal Low Frequency | No electrical discontinuity greater | (Details not fully provided in source) |
2510131431_hanxia-HX-NANO-SIM-7P-Ow-H1-45_C19189034.pdf
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