KEC MPS8550S-D-RTK/P
manufacturer:
KEC
Description:
Bipolar (BJT) Transistor PNP 25V 1.5A 200MHz 350mW Surface Mount SOT-23
Category:
Terminal Connectors
In-stock:
480000
Specifications
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
200MHz
Type:
PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Model Number:
MPS8550S-D-RTK/P
Introduction
Product Overview
MPS8550S is an epitaxial planar PNP transistor designed for high current applications. It is complementary to the MPS8050S.
Brand
KELC
Type Name
MPS8550S
Package
SOT-23
Marking
hrg Rank Lot No.
| Characteristic | Symbol | Rating (Ta=25C) | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -30 | V | ||||
| Collector-Emitter Voltage | VCEO | -30 | V | ||||
| Emitter-Base Voltage | VEBO | -5 | V | ||||
| Collector Current | IC | -1.5 | A | ||||
| Collector Power Dissipation | PC | 625 | * | mW | |||
| Junction Temperature | TJ | 150 | C | ||||
| Storage Temperature Range | Tstg | -55 to 150 | C | ||||
| Collector Cut-off Current | ICBO | -10 | VEB=-35V, IC=0 | nA | |||
| Emitter Cut-off Current | IEBO | -10 | VEB=-6V, IC=0 | nA | |||
| Collector-Base Breakdown Voltage | V(BR)CBO | -30 | IC=-100A, IE=0 | V | |||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -30 | IE=-2mA, IC=0 | V | |||
| DC Current Gain | hFE(1) | VCE=-1V, IC=-5mA | 85 | 160 | |||
| DC Current Gain | hFE(2) | VCE=-1V, IC=-100mA | 120 | 200 | |||
| DC Current Gain | hFE(3) | VCE=-1V, IC=-800mA | 160 | 300 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=-800mA, IB=-80mA | -0.3 | -0.75 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat) | IC=-800mA, IB=-80mA | -0.95 | -1.2 | V | ||
| Base-Emitter Voltage | VBE | VCE=-1V, IC=-10mA | -0.8 | -1.0 | V | ||
| Transition Frequency | fT | VCE=-10V, IC=-50mA | 100 | MHz | |||
| Collector Output Capacitance | Cob | VCE=-10V, f=1MHz, IE=0 | 50 | pF |
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Stock:
480000
MOQ:
9000
