GOFORD 4435
Specifications
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@10V;20mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
300pF
Number:
1 P-Channel
Output Capacitance(Coss):
350pF
Input Capacitance(Ciss):
1.6nF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
30nC@10V
Model Number:
4435
Introduction
Product Overview
The GOFORD 4435 is a semiconductor device utilizing advanced trench technology. It offers excellent Rds(on) and low gate charge, enabling operation with gate voltages as low as 4.5V. Its high power and current handling capability make it suitable for applications such as battery switches, load switches, and power management.
BrandGOFORD
Product Model4435
Package TypeSOP-8
CertificationsRoHS Compliant
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVdss | Vgs=0V, Id=-250pA | -30 | - | - | V |
| Zero Gate Voltage Drain Current | Idss | Vds=-30V, Vgs=0V | - | - | 1 | pA |
| Gate-Body Leakage Current | Igs | Vds=120V, Vgs=0V | - | - | +100 | nA |
| Gate Threshold Voltage | Vgs(th) | Vds=Vgs, Id=-250pA | -1 | -1.6 | -2.5 | V |
| Drain-Source On-State Resistance | Rds(on) | Vgs=-10V, Id=-10A | - | 16 | 20 | m |
| Drain-Source On-State Resistance | Rds(on) | Vgs=-4.5V, Id=-5A | - | 20 | 33 | m |
| Forward Transconductance | gfs | Vds=-15V, Id=-10A | 10 | - | - | S |
| Input Capacitance | Ciss | Vds=15V, Vgs=0V, f=1.0MHz | - | 1600 | - | pF |
| Output Capacitance | Coss | Vds=15V, Vgs=0V, f=1.0MHz | - | 350 | - | pF |
| Reverse Transfer Capacitance | Crss | Vds=15V, Vgs=0V, f=1.0MHz | - | 300 | - | pF |
| Turn-on Delay Time | td(on) | Vds=-15V, Id=-1A, Vgs=10V, Rgen=6 | - | 10 | - | nS |
| Turn-on Rise Time | tr | Vds=-15V, Id=-1A, Vgs=10V, Rgen=6 | - | 15 | - | nS |
| Turn-Off Delay Time | td(off) | Vds=-15V, Id=-1A, Vgs=10V, Rgen=6 | - | 110 | - | nS |
| Turn-Off Fall Time | tf | Vds=-15V, Id=-1A, Vgs=10V, Rgen=6 | - | 70 | - | nS |
| Total Gate Charge | Qg | Vds=-15V, Id=-10A | - | 30 | - | nC |
| Gate-Source Charge | Qgs | Vds=-15V, Id=-10A, Vgs=-10V | - | 55 | - | nC |
| Gate-Drain Charge | Qgd | Vds=-15V, Id=-10A, Vgs=-10V | - | 8 | - | nC |
| Diode Forward Voltage | Vsd | Vgs=0V, Is=-5A | - | - | -1.2 | V |
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