Nano sim card socket connector SHETIME NOS11-S1F1-2000-A featuring lcp housing and gold flash plating for performance
Specifications
Operating Temperature:
-
Card Connection Mode:
自弹式
Rated Voltage (Max):
-
Height Above Board:
1.37mm
Supplementary Features:
-
Card Detection:
-
Connector Type:
-
Card Type:
-
Mfr. Part #:
NOS11-S1F1-2000-A
Package:
SMD
Model Number:
NOS11-S1F1-2000-A
Introduction
Product Overview
This specification covers the NANO SIM card socket connector, designed for reliable connectivity in various applications. It offers both with and without SIM card detection features, ensuring flexibility in design. The connector is built with high-quality materials and undergoes rigorous testing to meet electrical, mechanical, and environmental performance requirements.
Product Attributes
- Brand: GAOYUEDA ELECTRONICS CO.,LTD
- Origin: Dongguan, China & Taiwan
- Material: Housing: LCP S475 UL 94V-0, Contact: C5191, Shell: SUS304-H
- Color: Black (Housing)
- Certifications: RoHS
Technical Specifications
| Part Number | Description | Material (Housing/Contact/Shell) | Finish (Contact) | Electrical Characteristics (Rating Current/Contact Resistance/Dielectric Withstanding/Insulation Resistance) | Mechanical Characteristics (Mating Cycles) | Operating Temperature | Storage Temperature |
|---|---|---|---|---|---|---|---|
| NOS11-S1F1-2000-A / NOS21-S1F1-2000-A | NANO SIM Card Socket (with/without pillar) | LCP S475 UL 94V-0 / C5191 / SUS304-H | Gold Flash Plated on Contact Area; Gold Flash Plated on Solder Tails | 0.5A MAX / 50 m MAX / 500V AC MIN / 1000 M MIN | 3000 CYCLES | -20 C to +65C | -10 ~ +40 |
Test Requirements Summary
| Test Item | Requirement | Procedure |
|---|---|---|
| Contact Resistance | 50 m Ohm Max (Initial), 100 m Ohm Max (Final) | EIA-364-23A |
| Dielectric Withstanding Voltage | 500 VAC for 1 minute (No creeping discharge or flashover) | EIA-364-20A |
| Insulation Resistance | 100 M Ohm Min. (at 250 VDC) | EIA-364-21A |
| Vibration | No physical damage, Current discontinuity 10 s, Contact Resistance 100m | EIA-364-28A |
| Mechanical Shock | No damage, loose part nor crack, Discontinuity: 10s MAX, Contact Resistance100m | MIL-STD-202 |
| Durability | No physical damage, Contact Resistance 100m | EIA-RS-364-09A (3000 cycles) |
| Contact Normal Force | 40gf /pin Min. (Initial), 25~35gf /pin Min. (After durability) | Tensile force test equipment |
| Contact Retention Force | 50gf /pin Min. | Tensile strength tester |
| Humidity Test (Steady state) | No physical damage, Contact resistance 100 m, Insulation Resistance 1000 M | EIA-RS-364-31A (402, 90~95% RH for 96 hours) |
| Thermal Shock | No physical damage, Contact resistance 100 m, Insulation Resistance 1000 M | EIA-364-32C (5 cycles of -55 to +85) |
| Temperature Life | No physical damage, Contact resistance 100 m, Insulation Resistance 1000 M | 85+2 for 96 hours |
| Solderability | No physical damage, Coverage 95% Min. | EIA-RS-364-52 (Sn63 at 245 5 for 10 0.5 seconds) |
| Salt Spray | No detrimental corrosion allowed in contact area, Contact resistance 100 m | EIA-RS-364-26A (5% salt water, 352 for 16 hours) |
| Resistance to soldering heat | No evidence of physical damage | Reflow soldering test condition (Fig 1) |
2511131740_SHETIME-NOS11-S1F1-2000-A_C52750316.pdf
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